View AO4478L_4326723.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

AO4478L N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4478L uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as general puspose, PWM and a load switch applications. -RoHS Compliant -Halogen Free
Features
VDS (V) = 30V ID = 9A (VGS = 10V) RDS(ON) <19m (VGS = 10V) RDS(ON) <26m (VGS = 4.5V) 100% UIS Tested! 100% Rg Tested!
SOIC-8 D
G
D
G S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current
C
S
Maximum 30 25 9.0 7.0 60 17 14 3.1 2.0 -55 to 150
Units V V
TA=25C TA=70C ID IDM Iar Ear PD TJ, TSTG
A
Avalanche Current C Repetitive avalanche energy L=0.1mHC TA=25C B Power Dissipation TA=70C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A AD Maximum Junction-to-Ambient C Maximum Junction-to-Lead
mJ W C
Symbol t 10s Steady-State Steady-State RJA RJL
Typ 31 59 16
Max 40 75 24
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4478L
Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=30V, VGS=0V TJ=55C VDS=0V, VGS= 25V VDS=VGS ID=250A VGS=10V, VDS=5V VGS=10V, ID=9A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=8A Forward Transconductance VDS=5V, ID=10A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current TJ=125C 1 60 16 25 21 24 0.70 1 4 466 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 90 61 3.7 9.3 VGS=10V, VDS=15V, ID=9A 4.3 1 2.3 5 VGS=10V, VDS=15V, RL=1.65, RGEN=3 IF=9A, dI/dt=500A/s 8 20 5 7.5 9.8 9 5.6 11 5.2 560 19 30 26 1.6 Min 30 1 5 100 2 Typ Max Units V uA nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=9A, dI/dt=500A/s
2 A. The value of RJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25C. The A value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150C, using 10s junction-to-ambient thermal resistance. C. Ratings are based on low frequency and duty cycles to keep initialT J=25C. D. The RJA is the sum of the thermal impedence from junction to lead R and lead to ambient. JL E. The static characteristics in Figures 1 to 6 are obtained using <300 pulses, duty cycle 0.5% max. s 2 F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in FR-4 board with 2oz. Copper, assuming a maximum junction temperature of T J(MAX)=150C. The SOA curve provides a single pulse rating.
Rev0: Sep 2008 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4478L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
70 60 50 ID (A) 40 30 20 10 0 0 1 2 3 4 5 VDS (Volts) Figure 1: On-Region Characteristics(Note E) 40 Normalized On-Resistance 35 30 RDS(ON) (m) 25 20 15 10 5 0 5 10 15 20 25 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage(Note E) 70 60 50 RDS(ON) (m) 40 125C 30 20 10 2 6 7 8 9 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage(Note E) 3 4 5 10 25C 1E-04 1E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics(Note E) 1E-03 IS (A) 1E+01 1E+00 1E-01 125C 1E-02 25C VGS=10V VGS=4.5V 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature(Note E) VGS=4.5V ID=8A VGS=10V ID=9A 4V 7V 10V 4.5V ID(A) 30 25 20 15 125C 10 VGS= 3V 2.5V 5 0 0 1 2 3 4 5 VGS(Volts) Figure 2: Transfer Characteristics(Note E) 25C VDS= 5V
ID=9A
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4478L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 8 VGS (Volts) 6 4 2 0 0 2 4 6 8 10 Qg (nC) Figure 7: Gate-Charge Characteristics VDS=15V ID=9A 800
Capacitance (pF)
600
Ciss
400
200 Crss 0
Coss
0
5
10
15
20
25
30
VDS (Volts) Figure 8: Capacitance Characteristics
70 ID(A), Peak Avalanche Current 60 50 40 30 20 10 0 0.000001 TA=25C TA=25C ID (Amps)
1000 100 10 1 0.1 0.01 0.1 1 VDS (Volts) Figure 10: Maximum Forward Biased Safe Operating Area (Note F) 10 100 TJ(Max)=150C TA=25C RDS(ON) limited 10s 100s 1ms 10ms 100ms 10s DC
TA=150C TA=150C
TA=100C
TA=125C
0.00001 0.0001 0.001 Time in avalanche, tA (s) Figure 9: Single Pulse Avalanche capability (Note C)
1000
TJ(Max)=150C TA=25C
Power (W)
100
10
1 0.00001
0.001
0.1
10
1000
Pulse Width (s) Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4478L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=75C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZJA Normalized Transient Thermal Resistance
1
0.1 PD 0.01 Single Pulse Ton
T
0.001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD4478L
Gate Charge Test Circuit & W aveform
Vgs
Qg
+
VDC
10V
VDC
DUT
+ Vds -
Qgs
Qgd
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
Rg Vgs
Vgs
DUT
VDC
+ Vdd -
90%
10% Vgs
t d(on) t on tr t d(off) t off tf
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
Vds
Id
Vgs
E AR= 1/2 LIAR
Vds
Vgs
2
BVDSS
VDC
+ Vdd -
Rg
Id
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Vds +
DUT
Q rr = - Idt
Vgs
t rr
Vds -
Isd
Vgs
L
Isd
IF
VDC
+ Vdd Vds
dI/dt
I RM
Vdd
Ig
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com

▲Up To Search▲

Price & Availability of AO4478L

	To Download AO4478L Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .